Abstract
An improved double crucible method of melt replenishing to counteract the dopant segregation effect in order to grow homogeneous doped GaAs crystals is brought forward, and its validity and feasibility are demonstrated by analytical and numerical study. The numerical results show that the new method can suppress the increase of dopant concentration near the growth interface and can maintain the homogeneity of dopant distribution along the radial direction. The positions of replenishing melt exit almost have no effects on the axial and radial distribution homogeneity of dopant Si in the crystal. So the new method has many distinct advantages: it can improve the crystallization rate and size, the operation is flexible, etc.
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