Abstract
The growth behavior of Pt crystallites vacuum-deposited on flat γ- and α-Al2O3 substrates was investigated by atomic force microscopy (AFM). In this study, we fabricated a thin layer of γ-Al2O3 on a planar sapphire (single crystalline α-Al2O3) substrate by Al+- and O+- ion implantation and annealing at 900 °C. AFM observation revealed that γ- and α-Al2O3 substrates have a negligible roughness compared with the size of the supported Pt crystallites deposited on them. The crystal structure was identified as a γ(111) plane for the γ-Al2O3 substrate, but an α(0001) plane for the sapphire substrate by Rutherford backscattering spectroscopy-channeling analysis (RBS-C) and X-ray diffraction analysis (XRD). We then observed the surface morphology of Pt crystallites on γ- and α-Al2O3 substrates, which were fabricated by sputtering of a Pt target. The as-deposited Pt thin film changed into Pt crystallites dispersed on the substrate with heat treatment at 800 °C in an oxidative atmosphere. It was found that the grow...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
