Abstract
AbstractNitride heterojunction bipolar transistors (HBTs) are promising for high‐power and high‐temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p‐InGaN which led to the successful fabrication of Npn‐type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low‐resistivity p‐InGaN base and wide‐bandgap n‐GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high‐power electronic devices. © 2006 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 89(3): 20–25, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20216
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