Abstract
ABSTRACTZn0.75Mg0.25S thin film was grown by solution growth technique. The as-grown thin film was examined to study its structural and optoelectronic properties. The formation of pure ZnMgS/O phase with wurtzite structure was confirmed by XRD. Optical bandgap (∼3.69 eV) was estimated through Tauc's plot obtained from UV-Vis spectroscopic data analysis. The existence of ZnMgS/O phonons was confirmed from the peaks obtained in Raman spectra. The PL spectrum shows band edge near UV emission. Decrease in resistance after light illumination was observed in I-V characteristics results in 98% photosensitivity.
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