Abstract
LiTaO 3 thin films were deposited by radio-frequency magnetron sputtering with a Li enriched target composed of Li 2O 2/Ta 2O 5 (55:45 at.%). Morphology, crystallinity, dielectric and pyrolectric properties of thin films of LiTaO 3 are studied according to the temperature of deposition and the nature of the back electrode (Ru/RuO 2 and RuO 2). In order to develop thermal microsensors containing pyrolectric thin layers deposited on membranes of SiN x ensuring the thermal isolation of the device, the final aim is to improve the pyroelectric coefficient for infrared pyroelectric detectors applications. The best pyroelectric coefficient of LiTaO 3 thin films (400 nm), obtained for a growth temperature of 620 °C and a pressure of 0.67 Pa, is equal to 40 µC/m 2 K.
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