Abstract
An alkali metal dispenser was employed as a lithium dopant source in the growth of ZnSe films by molecular beam epitaxy in an attempt to obtain p-type conductivity. Depending on the doping level, these films exhibited either dominant acceptor-bound exciton emission in low-temperature photoluminescent spectra, indicative of p-type conversion, or strong donor-acceptor-pair emission, likely due to transitions between interstitial Li donors and substitutional Li acceptors. Electrical resistivity was very high preventing a direct measurement of the majority carriers.
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