Abstract
Successful growth of large size single crystals of LBO by modified Bridgman method is reported. Platinum inserted carbon crucible was used for crystal growth in nitrogen atmosphere. Crystals upto 82 mm in diameter and 200 mm in length have been grown using the same diameter seed crystals. Problems such as incorporation of bubbles and crystal cracking caused during Czochralski growth have been overcome in the Bridgman growth. X-ray topography showed no sub-boundaries and very limited stress region near the outer surface of 82 mm diameter wafers. The dislocation density was found to decrease from the seed end to the top end. Variation of etch pit density across the wafer has also been analyzed.
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