Abstract
We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.
Highlights
Silicon carbide is gaining more interest by the day, which leads to a better understanding of its growth when using physical vapor transport (PVT)
The seeding layer transfer andand bulkbulk growth method was towas obtain a crack-a crack-free epilayer large enough to fit in a two inch surface
We presented a3C-SiC-on-Si method to reproducibly free-standing
Summary
Silicon carbide is gaining more interest by the day, which leads to a better understanding of its growth when using physical vapor transport (PVT) Material grown with this technique reaches diameters of 200 mm and dislocation densities as low as 2800 cm−1 [1,2,3]. A major drawback using any bulk growth method is the lack of a sufficient, high-quality seed. Such material can be obtained using the heteroepitaxial approach based on material growth on silicon substrates by chemical vapor deposition (CVD) [8,9,10]. Seeding material of high quality and a thickness close to 1 mm would allow enhanced bulk growth using methods like modified PVT (M-PVT)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
