Abstract
A novel chloride vapor phase epitaxial (VPE) growth of InP and InGaAs is performed using metal organic compounds instead of III group metal sources. The effect of an introduced partial pressure ratio between TMI and PCl3 on the InPgrowth features was investigated and analyzed thermodynamically. Typical values of carrier concentration and mobility for both of undoped InP and InGaAs at 77 K range in 4-15×1015 cm-3 and 10000–15000 cm2/Vs, respectivety.
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