Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C

Abstract

The InN films were deposited on GaN surfaces at a low temperature of 200 °C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). The REMOCVD system can provide N radicals from the plasma of a N2–H2 mixture gas without using ammonia. Two types of GaN substrate, bulk GaN and GaN on Si(111), were used. The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy.