Abstract
We report the use of monoethyl arsine, in conjunction with trimethyl indium, for the low temperature growth of InAs, and demonstrate its viability as a source of arsenic for growth by metalorganic chemical vapour deposition. Good quality InAs was relatively insensitive to both growth temperature, in the range 420–490°C, and VIII ratio, with ratios between 1.5 and 5 resulting in epilayers of good morphology. At a temperature of 470°C and trimethyl indium molar flow of 3.25 μmol min−1, the growth rate of InAs was 5 μm h−1. The growth rate was found to be thermally activated, with an activation energy of 37.5 kcal mol−1 with no evidence for parasitic reactions. The VIII ratio is lower than for the growth of InAs from arsine, while the temperature dependence of morphology is much less critical than that reported for growth of InAs from trimethyl indium and tertiary-butyl arsine.
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