Abstract
Advances in solid state device technology in the sixties established III–V materials as a new class of semiconductors for high speed microwave and highly efficient optical devices. Molecular beam epitaxy (MBE) is an extremely versatile thin film technique which can produce single-crystal layers with atomic dimensional controls and thus permit the preparation of novel structures and devices tailored to meet specific needs. Important factors to achieve high quality MBE growth such as in situ analysis, substrate preparations, growth conditions and layer properties are discussed.
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