Abstract
CdS crystallites with rod- and flower-like architectures were synthesized using a facile hydrothermal growth method. The hexagonal crystal structure of CdS dominated the growth mechanisms of the rod- and flower-like crystallites under specific growth conditions, as indicated by structural analyses. The flower-like CdS crystallites had a higher crystal defect density and lower optical band gap value compared with the rod-like CdS crystallites. The substantial differences in microstructures and optical properties between the rod- and flower-like CdS crystallites revealed that the flower-like CdS crystallites exhibited superior photoactivity, and this performance could be further enhanced through appropriate thermal annealing in ambient air. A postannealing procedure conducted in ambient air oxidized the surfaces of the flower-like CdS crystallites and formed a CdO phase. The formation of heterointerfaces between the CdS and CdO phases mainly contributed to the improved photoactivity of the synthesized flower-like CdS crystallites.
Highlights
Semiconductor photocatalysts have attracted considerable attention because of their successful utilization of solar energy for solving environmental remediation problems
The current study investigated the crystal growth, crystal features, and optical properties of rod- and flower-like CdS crystallites synthesized using a facile hydrothermal method
The surface of the aggregates turned thorny with increased hydrothermal growth duration, demonstrating that the CdS crystals have a tendency to grow along particular orientations from the surfaces of the initially formed aggregates (Fig. 1b)
Summary
Semiconductor photocatalysts have attracted considerable attention because of their successful utilization of solar energy for solving environmental remediation problems. Because of their wide band gap, most photocatalysts are active only under ultraviolet light, which occupies several percentages of the received solar energy [1, 2]. Compared with the abundant wide band gap semiconductor photocatalysts, photocatalysts with a visible-light band gap are relatively limited in number. Among the reported candidates of semiconductors with a visible-light band gap, CdS is a vital member of the II–VI semiconductor group with a direct band gap of approximately 2.4 eV, and it has high refraction index, excellent transport properties, and suitable energetics for harvesting solar light for photoactivated device applications. Several studies have fabricated CdS photocatalysts with various morphologies and scales for photoactivated
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