Abstract
A crack-free GaN film grown on 4-inch Si (111) substrate is proposed using two-step growth methods simply controlled by both III/V ratio and pressure. Two-step growth process is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The high-resolution X-ray diffraction (XRD) rocking curves of (002) and (102) planes for the GaN epitaxial layer with two-step growth method are 317 and 432 arcsec, while the corresponding values for the reference sample without two-step growth method are 550 and 1207 arcsec, respectively. The reduced threading dislocation of GaN film with two-step growth method is obtained to be ~2 × 108/cm2, which is attributed to effectively annihilate and bend threading dislocation.
Highlights
III–nitride semiconductors and related alloys are very promising materials for short wavelength optoelectronics (blue and green light-emitting diodes (LEDs), laser diodes (LDs)), and high-power devices [1,2,3]
We propose and grow a crack-free GaN film grown on Si substrate by using AIN buffer layer and two-step growth method, which consists of two growth steps; Crystals 2021, 11, 234
We propose and grow a crack-free GaN film grown on Si substrate by using AIN buffer layer and two-step growth method, which consists of two growth steps; (1) first step is low growth rate with high III-V ratio/pressure and (2) second step is high
Summary
III–nitride semiconductors and related alloys are very promising materials for short wavelength optoelectronics (blue and green light-emitting diodes (LEDs), laser diodes (LDs)), and high-power devices [1,2,3]. AlGaN/GaN high electron mobility transistors (HEMTs) have an excellent potential for high-power and high-frequency devices application [4]. In order to grow a GaN epitaxial layer, silicon (Si) can be considered to a promising substrate due to its low cost and large wafer size compared to sapphire (Al2 O3 ), silicon carbide (SiC), and GaN substrate [5]. The huge differences in lattice constant, crystal structure, and thermal expansion coefficient between GaN and Si are believed to be responsible for the difficulties in growing good quality GaN films on Si substrate. For successfully performing the growth of GaN on Si substrates, the AlN and AlGaN layers are typically used to mitigate the thermal and lattice mismatch at heterointerface of between GaN layer and Si wafer [6,7,8]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
