Abstract
Distributed Bragg reflector mirrors (grown by MBE) are designed to give maximum reflectance at 1.68 μm. The DBR is incorporated into a resonant cavity enhanced (RCE) detector by growing GaSb (by MOVPE) on top of the mirror. Device results show such an RCE detector has enhanced quantum efficiency and photocurrent compared to a nonresonant detector grown at the same time. The initial nucleation and growth of GaSb on GaAs by MOVPE is studied by atomic force microscopy (AFM). Conditions are established for the nucleation of small islands of GaSb using TMGa and TMSb as precursors. However, the dark current suggests that the initial nucleation of GaSb is still not optimised. In order to nucleate smaller GaSb islands at lower temperatures, two new precursors are used. Triisopropylgallium (TIPGa) and trisdimethylaminoantimony (tDMASb) are used in combination for the first time to grow GaSb at 480°C. This results in nucleation of much smaller islands and subsequent improvement in the dark current and quantum efficiency of the nonresonant detector. Further work is needed on the equivalent (RCE) detector.
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