Abstract
We have grown GaN on (110) NdGaO 3 (NGO) substrates by pulsed laser deposition (PLD) and characterized their structural properties using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), grazing incidence-angle X-ray diffraction and reflectivity (GIXD and GIXR). RHEED and GIXD measurements have revealed that the single crystal hexagonal (112̄0) GaN grows on NGO (110) and its in-plane epitaxial relationship is GaN [0001]//NGO [11̄1]. The lattice mismatches for this alignment in NGO [1̄11] and NGO [11̄1] direction are calculated to be 0.97 and −4.86%, respectively. It is found that the GaN film on NGO (110) is almost fully relaxed in the (112̄0) plane. GIXR measurements revealed that the hetero-interface between GaN and the NGO substrate was steep and its interface roughness was as low as 0.5 nm.
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