Abstract
The growth of monolithically integrated silicon-on-insulator (SOI) substrates using rare earth oxide insulator layers is presented. Rare earth oxides may be grown epitaxially on Si(111) substrates due to their unique cubic crystal structure and lattice matching to twice the silicon lattice spacing. Growth of silicon on top of epitaxial rare earth oxides is achieved and several variations of growth schemes are investigated. The current process has been developed on 100mm silicon wafers and may be scaled up to 200mm wafer sizes in a production type cluster tool.
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