Abstract
Ge/Si and Si 1− x Ge x nanostructures were grown on Si(100) at 350 °C substrate temperature with a significant growth rate of about 10 Å min −1 using hot-wire decomposition of disilane and germane in an ultrahigh vacuum environment. A quartz crystal microbalance (QCM) was used to monitor growth rates and to study the influence of feed gas pressures. In-situ X-ray photoelectron spectroscopy measurements allowed us to calibrate alloy stoichiometry monitored by QCM. Ex-situ high-resolution transmission electron microscopy observations demonstrated the 2D epitaxial growth of partly relaxed nanolayers. These promising results may be closely related to a surfactant-like role of atomic hydrogen, which appears as a beneficial sub-product of the hot-wire decomposition process of hydride sources. © 1997 Elsevier Science S.A.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
