Abstract
ABSTRACTBuried single crystalline CoSi2 layers in Si(100) have been grown using molecular beam allotaxy. In this paper, we investigated the diffusive interaction of two buried silicide precipitate layers, one with a small Co peak concentration of 10 at% and another one with 26 at%. Annealing causes first local coarsening in each layer, and then dissolution of the thinner precipitate layer. The accumulation of the Co atoms at the thicker layer is described by a simple model for the diffusional redistribution.
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