Abstract
Growth, formation, and stability of anodic oxides obtained on were investigated by coupling electrochemical methods and X-ray photoelectron spectroscopy (XPS) analyses. Photocurrent transients and capacitance measurements performed before and after the semiconductor surface oxidation exhibit new electrical interfacial properties, whereas XPS analysis gives access to chemical composition and estimation of oxide layer thickness. In this work, using a galvanostatic method, oxidation of the surface has been studied at pH 9 for two current densities: 0.2 and . Using transient photocurrent and Mott–Schottky behavior as in situ probes, we have pointed out several steps for the oxidation process, correlated to a gradual oxide coverage which is evidenced by XPS characterization. The current density chosen to perform the oxidation governs the resulting chemical composition, texture, and electrical properties of the oxide. For low current density, the anodic mechanism varies progressively from a pure semiconductor oxidation process to a solvent oxidation contribution. For high current density, this trend disappears whereas semiconductor oxidation continues to take place.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
