Abstract
GaInP alloy layers with desired compositions were grown on GaP substrates using the compositional conversion technique. An InP layer grown on a GaP substrate was brought into contact with a GaInP saturated solution and kept at a constant temperature in isothermal conditions. A relatively good GaInP layer was obtained. Furthermore, to have a better understanding of this mechanism, a solid-liquid diffusion numerical simulation model was applied. Numerical solutions agree with experimental results and explain well the conversion phenomenon.
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