Abstract
ZnSe single crystals were grown by the rotational chemical vapor transport (R-CVT) method using iodine as a transport agent. This method is confirmed to have a sufficient effect on the suppression of thermal convection to enable stable growth of ZnSe. The observed features of this method are described below. The growth rate decreases with the increase in the rotational frequency of the growth ampoule. The decrease saturates at the critical rotational frequency regulated by Gr 1/2/ F, where Gr is the Grashof number and F is the rotational frequency normalized by the dimension of the ampoule and kinetic viscosity of the gas. The mode of nonuniformity of the growth rate across the growth interface converts at the above critical rotational frequency. The most uniform growth rate across the growth interface, which leads to morphological stability, is obtained under the above critical rotational frequency. These features coincide with the predictions by numerical simulations.
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