Growth model of lantern-like amorphous silicon oxide nanowires

Abstract

Silicon oxide nanowire assemblies with lantern-like morphologywere synthesized by thermal evaporation of the mixed powder ofSnO2 and activecarbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterizedby a scanning electron microscope (SEM), high-resolution transmission electronmicroscope (HRTEM), energy-dispersive spectroscope (EDS) and selectivearea electron diffraction (SAED). The results show that the nano-lantern hassymmetrical morphology, with one end connecting with the silicon wafer andthe other end being the tin ball. The diameter of the nano-lantern is about1.5–3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diametersranging from 70 to 150 nm. One single catalyst tin ball catalyzes more thanone amorphous nanowires’ growth. In addition, the growth mechanism of thenano-lantern is discussed and a growth model is proposed. The multi-nucleationsites round the Sn droplet’s perimeter are responsible for the formation of manySiOx nanowires. The growing direction of the nanowires is not in the same direction of themovement of the catalyst tin ball, resulting in the bending of the nanowires and formingthe lantern-like silicon oxide morphology. The controllable synthesis of the lantern-likesilicon oxide nanostructure may have potential applications in the photoelectronic devicesfield.