Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

Abstract

AlN layers were grown on 3.5° off 6H-SiC substrate by plasma-assisted molecular beam epitaxy (MBE). A study of the growth mechanism has been carried out by varying the growth time and the III/V ratio, at a constant growth temperature of 800°C. The layers were characterized by means of Reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is shown that nitrogen-rich conditions always give rise to a three-dimensional growth with spotty RHEED patterns and rough surface. In Al-rich conditions, the growth is much more two dimensional like with streaky RHEED patterns. By AFM, step bunching growth is observed. The size of the steps depends on the thickness of the layer as well as on the III/V ratio. All the samples grown in Al-rich conditions showed better crystalline quality than those grown in N-rich conditions.