Abstract
AlGaAs layers were grown on recessed GaAs substrates by MOVPE at 5 and 100 Torr. The two mechanisms, the gas phase diffusion through the stagnant layer and the surface migration of the growing species, are responsible for the surface step height after the growth. Since the mean free path in the gas phase at 5 Torr (≈20μm) is longer than the recess height (≈1μm), only the surface migration determines the growth at 5 Torr, while both mechanisms contribute to the growth at 100 Torr. The surface diffusion equation is solved to find out the relation between the growth conditions and the surface step height after the growth. It was found that the surface migration length on the (111)A surface is much longer than that on the (100) plane. The optical waveguide is fabricated by growing a double-heterostructure on the recessed substrate, and light confinement in the channel is verified.
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