Abstract
Ultrathin oxynitride films with a thickness range between 4 and 6 nm were grown on Si (100) wafers in an N 2O gas ambient using a conventional furnace. Growth temperature and time dependence of the N 2O oxynitride thickness was investigated between 800 and 1050°C. We found that the N 2O gas flow rate dependence of the thickness was small below 900°C and was abruptly increased above 900°C. According to X-ray photoelectron spectroscopy (XPS) analysis, nitrogen concentration and the nitrogen bonding configurations was changed between temperatures below and above 900°C. Two different growth kinetics below and above 900°C were suggested.
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