Abstract
Influence of the intrinsic lattice defects and background impurities on the properties of nitride GaN, InN, and InGaN compounds and parameters of the LED InGaN/GaN/Al 2 O 3 heterostructures with an active region based on multiple InGaN quantum wells is studied. It is shown that preferential accumulation of donor-type defects in GaN, InN, and InGaN compounds is connected with the peculiarities of energy position of the charge neutrality level CNL in the band spectra of these compounds. Influence of the sapphire substrate on the defect formation in nitride layers, the use of profiled sapphire substrate to reduce the dislocation density in an active region of the InGaN/GaN/Al 2 O 3 heterostructure, and the use of polar and semi-polar planes to reduce the Stark effect are considered.
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