Abstract
We compared the electroluminescence (EL) polarization of two Fe∕MgO∕light-emitting-diode (LED) structures grown at different substrate temperatures for MgO growth: room temperature and 400°C. Two spin-LED wafers were prepared on molecular beam epitaxy grown LEDs by e-beam evaporation: one was LED∕MgO (RT)∕Fe (RT)∕Au cap (RT), and the other was LED∕MgO (400°C)∕Fe (150°C)∕Au cap (90°C). Spin-polarized EL was clearly observed in the latter sample, while the EL polarization was hardly observed in the former sample. The reasons for the near absence of EL polarization in the former sample are considered to be the degradation of the tunneling junction resulting from the crystallinity and the As-rich surface of the LED.
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