Abstract
A novel atomic layer deposition (ALD) route of Y2O3 thin films was developed and demonstrated utilizing Y(iPrCp)3 and O3. The ALD growth characteristics were investigated by varying precursor dosage, reactor temperature, and number of deposition cycles. The growth rate of Y2O3 was found to be 0.17 {plus minus} 0.01 nm/cycle within the ALD temperature window of 245 - 300 ºC. The resulting films were analyzed with spectral ellipsometry and x-ray photoelectron spectroscopy, in order to determine stoichiometry, impurity, annealing behavior, and refractive index. The results of this work demonstrate the potential for suggesting Y(iPrCp)3 as a suitable ALD precursor and Ar+ beam as an effective means of removing surface Y(OH)3 on Y2O3 films.
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