Abstract
(In + Nb) co-doped TiO2 (TINO) films with a rutile structure have been prepared on m-plane sapphire substrates using a pulsed laser deposition method. The film growth mode and the atomic-scale microstructure of the TINO/sapphire heterostructure have been investigated by advanced electron microscopy techniques. The crystallographic orientation relationship of (001)[010]rutile//(11¯00)[0001]sapphire between the TINO films and the m-plane sapphire substrates has been determined. Across the TINO/sapphire interface, Ti(In,Nb)O6−octahedra connect AlO6−octahedra through either edge-sharing or corner-sharing. Misfit dislocations appear at the TINO/sapphire interface and contribute to epitaxial strain relaxation in the heterosystem. Additionally, two types of twins, (011)[100] and (031)[100], form within the films. Cation segregation occurs at the twin boundary and the TINO grain boundary. The findings here may provide a better understanding of the growth behaviors of the (In + Nb) co-doped rutile TiO2 films prepared on other types of substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
