Abstract
AbstractA simple LPCVD reactor has been used to deposit 3C-SiC on oxidized, bare and MBE carbonized Si (001) wafers. The deposition experiments were conducted at different temperatures, times and gas flows pyrolizing tetramehylsilane (TMS). Voids at the interface and hillock formation were observed preferentially on the bare Si substrates due to Si outdiffusion. The best LPCVD films were obtained at temperatures around 1170°C on smooth single-crystalline carbonized substrates. The nucleation and growth of 3C-SiC on Si02/Si substrates proceeds at a slower rate with the formation of 3D island with a high aspect ratio.
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