Abstract
TlInGaAsN/TlGaAsN system was proposed to fabricate the temperature-insensitive both lasing wavelength and threshold current density laser diodes, which are important in the wavelength division multiplexing optical fiber communication system. The effects of indium and nitrogen concentrations in the quantum wells (QWs) and barriers on the properties of molecular-beam epitaxy grown TlInGaAsN/TlGaAsN triple QWs (TQWs) were investigated. The TQW samples having higher N concentration in the QWs have the highest Tl incorporation without deterioration of the crystalline quality. The temperature dependence of the photoluminescence (PL) peak energy was found to be the least for the highest Tl containing TQW sample. The incorporation of Tl causes the reduction in the coupling constant of the electron–phonon interaction, leading to the reduced temperature dependence of the PL peak shift. Thermal activation energies, which are deduced from the Arrhenius plot of PL intensity, are attributed to the delocalization of the excitons at low temperatures and to the escape of carriers from the QWs to the barriers at high temperatures.
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