Abstract
Recent developments in the field of solar photovaltaic technology with CdS as window layer indicated that Cd1-x Znx S is more suitable as the window layer because its propeerties may be tailored by simply adjusting the Zn content. It is known that the band gap of (Cd, Zn) S increases linearly with increasing Zn in the film.We report here our studies on the growth and microstructure of thin films of cadmium zinc sulphide (Cd1-xZnxS) with the values of x in the range (0<x<0.27). Films were deposited by coevaporation of cadmium sulphide and zinc sulphide by the hot wall evaporation. Three different substrates (NaCl, KCl and LiF) were used for deposition of films in the thickness range 70 - 90 nanometer. The substrate, source and hot wall temperatures were 510 K, 1170 K and 480 K respectively.The microstructure of the films (fig. 1 ,2,3) were observed by transmission electron microscope (Hitachi H 600) and scanning electron microscope (Hitachi S-2300).
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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