Abstract
The URT(Uramoto-gun with Tanaka magnetic field)-IP(ion plating) method is a technique for depositing a thin film on a substrate. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the material properties were evaluated. The quality of ZnO thin films grown by the URT-IP method was found to be sensitive to oxygen supply during growth. It was observed that the saturation point of the growth rate corresponding to the optimum oxygen supply leads to the best electrical properties. The profiles of the dependence of film properties on oxygen supply revealed a part of growth mechanism of the URT-IP method.
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