Abstract
Low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) growth of lattice-matched p-type InGaAs on InP substrates using a new dopant precursor, carbon trichloro bromide (CBrCl 3), has been investigated. The p-type conductivity with a hole concentration up to 10 19 cm −3 based on the Hall measurement has been achieved only in the samples grown under very limited conditions such as a V/III ratio below 5, a growth temperature around 540 to 550 °C and high growth rates over 100 nm/min. The X-ray rocking-curve analysis of these samples has revealed that the conduction type does not depend on the type of stress such as tensile or compression caused by a very small lattice mismatch within |Δ a|⩽5×10 −3. However, it has been found that samples with hole concentration over 10 18 cm −3 always exhibit the tensile stress and the efficiency of the p-type doping has been enhanced by the introduction of tensile stress controlled by the growth.
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