Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

Abstract

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of the InGaN/GaN heterostructures were achieved. Photoluminescence measurements revealed the superior optical properties of InGaN/GaN MQWs emitting from ultraviolet (≈388 nm) to green-yellow (≈528 nm) range with the In composition varying from 0.04 to 0.30. Stimulated-emission features by optical pumping were demonstrated, which implied the high-quality of the MBE-grown InGaN/GaN MQWs.