Abstract
General techniques for the growth of heteroepitaxial HTSC thin films are shortly reviewed, and some recent trends are emphasized. The crystallographic characterization of such films is described in detail, including various X-ray diffraction settings, as well as electron diffraction and channelling methods. Among physical characterizations, the microwave measurements are highly defect sensitive, and a clear correlation between the microstructure, the a.c. susceptibility losses and the surface resistance is reported. Finally, main trends about potential applications are given.
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