Abstract
We have studied on the use of a GaN powders for growing gallium oxide (Ga2O3) nanoribbons and nanosheets by the thermal evaporation technique. We used x-ray diffraction, scanning electron microscopy, and transmission electron microscopy to characterize the samples. The results showed that the produced Ga2O3 nanomaterials had single crystalline monoclinic structures. The proportion of wider nanoribbons or nanosheets to nanoribbons increased by increasing the growth temperature and by employing the mixture of GaN and ZnO powders.
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