Abstract
One-dimensional quasicrystal structures composed of III-Vsemiconductor GaAs/AlGaAs multilayers in deterministic Thue–Morse (TM)sequences have been grown by using gas-source molecular beam epitaxy toinvestigate both the structural and the photonic bandgap properties.The x-ray measurements show that this aperiodic system exhibits obviousperiodic spatial correlations, from which the precise thickness of theconstitutive layers could be determined. Transmission and reflectionmeasurements experimentally demonstrated plenty of photonic bandgapswith traditional or fractal features existing in those quasicrystalstructures, which are in good agreement with the transfer matrixsimulations. The diversity of this TM system makes it a good candidatefor photonic device applications.
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