Abstract
Lattice matched epitaxial layers of on substrates are of current interest in a number of device applications. In this paper, we report on the growth of such epitaxial layers using organometallic chemical vapor deposition with triethylgallium (TEG), triethylindium (TEI), and arsine for the reactant species. A conventional, atmospheric pressure reactor system was used for these experiments. The depletion reaction between TEI and arsine has been modeled and a theory predicting the epitaxial layer composition as a function of the reactant pressures at the inlet has been developed, based on this model. The inclusion of an in situ substrate etching step has been found to significantly improve the surface morphology of the grown layer and resulted in mirror‐like surfaces. The effect of lattice mismatch is shown to be much worse for layers in tension than for layers in compression.
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