Abstract
We report for the first time the successful growth of short period strained-layer superlattices of InSb InP by atomic layer molecular beam epitaxy. This sample combination is especially interesting because the equivalent ternary alloy has a very wide miscibility gap in which it cannot be grown. The samples were characterized by reflection high-energy electron diffraction, X-ray diffraction, Hall measurements and Raman spectroscopy. The X-ray measurements show clearly satellite peaks that indicate the formation of the superlattice. Raman spectra show the confined phonon peaks of InSb (194 cm −1) and InP (300 cm −1), respectively. Exciting in resonance with the E 1 transition of the SPSL the peaks corresponding to the LO 1 and LO 2 phonons are clearly identified.
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