Abstract
Compositionally controlled, light-emitting, group IV semiconductor nanomaterials have potential to enable on-chip data communications and infrared (IR) imaging devices compatible with the complementary metal−oxide−semiconductor (CMOS) technology. The recent demonstration of a direct band gap laser in Ge-Sn alloys opens avenues to the expansion of Si-photonics. Ge-Sn alloys showed improved effective carrier mobility as well as direct band gap behavior at Sn composition above 6–11%. In this work, Ge1−xSnx alloy nanoparticles with varying Sn compositions from x = 0.124 to 0.178 were prepared via colloidal synthesis using sodium borohydride (NaBH4), a mild and non-hazardous reducing reagent. Successful removal of the synthesized long-alkyl-chain ligands present on nanoparticles’ surfaces, along with the passivation of the Ge-Sn nanoparticle surface, was achieved using aqueous (NH4)2S. The highly reactive surface of the nanoparticles prior to ligand exchange often leads to the formation of germanium oxide (GeO2). This work demonstrates that the (NH4)2S further acts as an etching reagent to remove the oxide layer from the particles’ surfaces. The compositional control and long-term stability will enable the future use of these easily prepared Ge1−xSnx nanoalloys in optoelectronic devices.
Highlights
IntroductionCompatible group IV semiconductor material that has attracted great attention over the past two decades owing to its compatibility with Si and its great potential for use in optoelectronic integration circuits (OEIC) [1]
Germanium-tin (Ge-Sn) is a complementary metal–oxide–semiconductor (CMOS)compatible group IV semiconductor material that has attracted great attention over the past two decades owing to its compatibility with Si and its great potential for use in optoelectronic integration circuits (OEIC) [1]
Compatible group IV semiconductor material that has attracted great attention over the past two decades owing to its compatibility with Si and its great potential for use in optoelectronic integration circuits (OEIC) [1]
Summary
Compatible group IV semiconductor material that has attracted great attention over the past two decades owing to its compatibility with Si and its great potential for use in optoelectronic integration circuits (OEIC) [1]. Various Ge-Sn materials, including alloy nanocrystals [6], quantum dots [7], nanowires [8], and core/shell particles [9] have been reported. Different strategies such as pulsed laser melting [10], epitaxial growth [11], microwave synthesis [12] and solution-based methods [13] have been investigated to produce direct gap group IV semiconductors. The synthesis and ligand exchange processes are shown in Scheme 1. An illustration illustration of the synthesis and ligand exchange process alloynanoparticles
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