Abstract
A p-ZnO:N/n-GaN heterojuction light emitting diode was successfully constructed by thermal oxidation of Zn3N2 film which was deposited on n-type GaN substrates by N-plasma assisted pulsed laser deposition technology. The p-ZnO:N/n-GaN light emitting diode showed a typical diode current–voltage (I–V) characteristic and an electroluminescence emission of 517 nm was observed. This green electroluminescence emission came from the p-ZnO:N layer, which was confirmed by analyzing the results of x-ray diffraction, I–V measurement and electroluminescence spectra comprehensively.
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