Grazing-angle Incidence X-ray Diffraction by the Si1-α(x)-β(x)Geβ(x)Cβ(x)/Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface

Abstract

AbstractPresented theoretical paper concerns the investigation of SiGeC/Si heterojunction by the Grazing-angle Incidence X-ray Diffraction (GIXD) method. We consider a possibility in principal of the GIXD by the specific long-range harmonic variations of the germanium and carbon compositions in the thin SiGeC layer. Evaluation of the theoretically calculated coherent part of x-radiation scattered by the SiGeC layer points the way to the experimental direct investigations of the long-period structured intermediate transformation states of SiGeC layer that emerge owing to inhomogeneity of the strain field along the heterojunction surface.