Graphene Field‐Effect Transistors on Hexagonal‐Boron Nitride for Enhanced Interfacial Thermal Dissipation

Abstract

AbstractOwing to its atomic thickness, thermal dissipation is one significant bottleneck for the practical application of graphene in electronics. Here, it is demonstrated that a high‐quality ultraclean van der Waals interface can be obtained after modifying the SiO2/Si substrate with hexagonal‐boron nitride (h‐BN) by plasma‐enhanced chemical vapor deposition, which improves the mobility and the interfacial thermal dissipation of graphene field‐effect transistors (FETs). On h‐BN, interfacial thermal resistance decreases by more than 77% and the saturated power density of graphene FETs increases by 2–3‐folds to 3.45 × 105 W cm−2, higher than the power density of current CPUs (≈100 W cm−2), demonstrating its potential in future graphene‐based electronics.