Abstract
This paper present an experimental study on a new dry transfer method of graphene applied as transparent conducting electrode in textured silicon solar cells. Raman spectra of dry exfoliated graphene indicated a monolayer graphene was transferred onto textured Si cells and the dry exfoliated graphene with better crystalline quality is attained. Photovoltaic result shows the short circuit current of the dry transferred graphene on texture Si solar cell has an increase of 28% compared to the wet transferred graphene. It proves the possibility of dry transferred graphene as transparent conducting electrode in textured Si solar cell applications.
Highlights
Graphene has attracted considerable attraction as its unique physical properties since experimentally fabricated in 2004.1,2 As a promising material for transparent electrode, graphene has extraordinary optical and electronic properties such as high optical transmittance (∼98%), high thermal conductivity (5000W/m∗K) and excellent electronic properties, which enable graphene a good alternative to indium tin oxide (ITO) or other metal as transparent electrode in optoelectronic applications.[3,4] In addition, chemical vapor deposition (CVD)-graphene films can be transferred and adhered onto the substrate without complicated processes.[5]
It is reported that the ratio of the intensity of 2D peak and G peak (I2D/IG) and the full width at half maximum (FWHM) are the key parameters to evaluate the quality of transferred graphene.[18]
Compared to the wet transfer method (I2D/IG=1.72), the dry exfoliated graphene has a I2D/IG intensity ratio of 2.636 and a 2D-band FWHM of 26cm-1, which demonstrate a high quality of monolayer graphene transferred on Si substrate successfully
Summary
Graphene has attracted considerable attraction as its unique physical properties since experimentally fabricated in 2004.1,2 As a promising material for transparent electrode, graphene has extraordinary optical and electronic properties such as high optical transmittance (∼98%), high thermal conductivity (5000W/m∗K) and excellent electronic properties (high mobility, low resistivity and zero bandgap), which enable graphene a good alternative to indium tin oxide (ITO) or other metal (such as silver) as transparent electrode in optoelectronic applications.[3,4] In addition, chemical vapor deposition (CVD)-graphene films can be transferred and adhered onto the substrate without complicated processes.[5]. Because of avoid metal ion pollution which caused by etching process, and less organic solvent is involved
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