Abstract
Low-noise amplifier is one of the most attractive applications of graphene transistors in the RF area. In this letter, a graphene amplifier MMIC is fabricated on the quasi-free-standing bilayer epitaxial graphene grown on SiC (0001) substrate. In order to realize both the high gain and low return loss, Au matching lines are designed as the input and output impedance match networks. The fabricated graphene amplifier MMIC shows a small-signal power gain of 3.4 dB at 14.3 GHz and a minimum noise figure of 6.2 dB. This letter is a significant step forward for graphene electronics in low-noise amplifier and demonstrates graphene’s potential in RF applications for future high-speed electronics.
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