Abstract
Research on whisker/matrix interfaces and matrix grain boundaries in Si3N4 and Al2O3 composites reinforced with SiC whiskers by HREM imaging have shown that disordered layers exists in these regions. The disordered interfacial regions are often considered amorphous layers, particularly when they are thicker than ∼1nm. They appear to be discontinuous in the whisker/matrix interfaces and continuous in matrix grain boundaries. Thin amorphous layers in composites and conventionally synthesized ceramics, particularly those based on Si3N4, are expected to contain oxygen from sintering aids and powder particle surface impurities. In this paper we report the results of an investigation of silicon nitride matrix grain boundaries in Si3N4/SiC(w) composites (CMC) and polycrystalline CVD silicon nitride, using very high spatial resolution position resolved EELS and HREM imaging. Interfaces between SiC and silicon nitride in CMC materials have been discussed elsewhere.The CMC's were prepared by pressing and presintering Toyo-Soda α-silicon nitride (TS10) powder with 5.5 wt% Yttria and 1.1 wt% Alumina as sintering aids and 20 vol% β-SiC Huber whiskers at 1500°C in 0.1MPa Argon.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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