Abstract
Hexagonal boron nitride (hBN) has recently become a promising material for being utilized as switching layer while resistive random-access memory (RRAM) continues to emerge. In this work, the insertion of intentionally oxidized titanium oxide between multilayer hBN and top electrode modulates the RESET characteristic into gradual RESET, which can promote the reliability for multilayer-hBN RRAM. The consistency of high resistance state (HRS) can be improved by preventing the RRAM devices from abrupt RESET, and then the good uniformity of SET and RESET voltages can be obtained. The effective modulation can be attributed to the multiple thin conductive filaments, and the inhibition for Ti penetration. Significant reliability improvement for multilayer-hBN RRAM is achieved through the demonstrated simple process control.
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