Abstract
The article demonstrates how quantitative compositional depth profiles of Cu(In,Ga)(S,Se)2layers can be utilized to determine their energy bandgap distribution.
Highlights
Solar cells based on Cu(In,Ga)(Se,S)[2] (CIGSSe) absorber layers exhibit the highest power conversion efficiencies (PCE) of all polycrystalline thin lm technologies,[1] which makes this type of solar cell a promising candidate for managing the challenge of clean electric energy supply in the future
In the present contribution we showed how to optimize the sputtering parameters of pulsed Glow discharge optical emission spectrometry (GD-OES) for investigating the elemental depth pro les of CIGSSe thin lms
A er ensuring optimum sputtering conditions, one emission line for each contained element was tested for its suitability for quantitative depth pro ling
Summary
The properties of all reference and calibration samples used in this study are summarized in the ESI.† The samples used for the veri cation of the method (solar cell applications) are either grown in the same system as the CIGSe reference layers, but using a three-stage process (S-free samples)[20] or are grown using a sequential RTP (in the case of CIGSSe-samples). Details of this RTP are published in ref. The current density– voltage (j–V) measurements were performed under standard test conditions (AM 1.5 g spectrum, 1000 W mÀ2, 25 C) using a WACOM A+ solar simulator; external quantum efficiency (EQE)-measurements were carried out using a self-built setup, and X-ray uorescence spectrometry (XRF) measurements were performed with a Rigaku ZSX Primus II
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